Transistor characteristics
 1) How many p-n junctions a transistor has? 3 2 More than three 1

 2) What is the condition for the proper transistor action? The input junction is forward biased and output junction is reverse biased. The input junction is reverse biased and output junction is forward biased. Both the junctions should be forward biased. None of these.

 3) Why the thickness of base section of a transistor made small? None of these To increase the output resistance of the transistor. In order to reduce the recombination of charge carriers passing through it. To prevent the flow of charge carriers from emitter to collector.

 4) What is the current amplification factor (α) for a common emitter configuration at constant V(CE)? α = ΔI(C) / ΔI(E) α = ΔI(B) / ΔI(C) α = ΔI(E) / ΔI(B) α = ΔI(C) / ΔI(B)

 5) Choose the correct relation between the current gain of common base and common emitter configurations from the following. β = α/(1+ α) β = α/(1- α) β = 1/(1- α) None of these

 6) Which of the following is not an application of a transistor? Switch None of these Oscillator Amplifier

 7) Why a common emitter transistor is preferred over a common base transistor? Because the current gain in CB mode is much larger than that in CE mode. Because the thickness of emitter section is much larger than that of base section. Because of the infinite input resistance of common base transistor Because the current gain in CE mode is much larger than that in CB mode.

 8) How does the collector current in a junction transistor changes when the base region has large size and is heavily doped? Changes if the base is p type Decreases No change occurs Increases

 9) In which region the doping concentration of a transistor is the highest? All regions have equal doping concentration. Base Emitter Collector

 10) What is the current gain for a transistor in common emitter configuration, where I(E) = 4.2 mA and I(C) = 4 mA? 1.95 0.105 0.95 1.05

Cite this Simulator: